Power MOSFET
iMN08N20T Mass production
200V N-channel MOSFET, 7.7 mΩ, TOLLB-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 200V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 114A
- Drain current, ID @ 100°C
- 81A
- Rds(on) max @ VGS = 10V
- 7.7 mΩ
- Rds(on) max @ VGS = 6V
- 8.8 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 186 nC
- Package
- TOLLB-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 200V, 114A at 25°C
- Rds(on) specified at 10V (7.7 mΩ max) and 6V (8.8 mΩ max) gate drive
- Qg 186 nC total gate charge (Qgd 31 nC)
- Junction temperature up to 175°C
- TOLLB-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 200V |
| VGS | ±20V |
| ID @ 25°C | 114A |
| ID @ 100°C | 81A |
| PD | 300W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 7.7 mΩ |
| Rds(on) @ VGS = 6V | 8.8 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 9182 pF |
| Coss | 468 pF |
| Crss | 38 pF |
| Gate charge | |
| Qg | 186 nC |
| Qgs | 58 nC |
| Qgd | 31 nC |
| Switching | |
| td(on) | 25 ns |
| tr | 70 ns |
| td(off) | 135 ns |
| tf | 84 ns |
| Body diode | |
| trr | 148 ns |
| Qrr | 805 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN08N20T?
- iMN08N20T is a 200V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TOLLB-8L package.
- What are the key ratings of iMN08N20T?
- iMN08N20T is rated 200V VDS and 114A at 25°C, with Rds(on) of 7.7 mΩ max at VGS = 10V and 8.8 mΩ max at 6V.
- Is iMN08N20T in production?
- iMN08N20T is in mass production. Samples are available from inergy.
Need iMN08N20T samples or design help?
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