Power MOSFET
iM4719 Mass production
30V Complementary N+P MOSFET, 24 mΩ / 29 mΩ, SOP8B-8L
Key specifications
- Type
- Complementary N+P MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 7.4A / -6.7A
- Drain current, ID @ 100°C
- 4.7A / -4.2A
- Rds(on) max @ VGS = 10V
- 24 mΩ / 29 mΩ
- Rds(on) max @ VGS = 4.5V
- 40 mΩ / 46 mΩ
- Gate threshold, VGS(th)
- ±2V
- Total gate charge, Qg
- 7.6 nC / 23 nC
- Package
- SOP8B-8L
- ESD protection
- No
- Status
- Mass production
Features
- Complementary N+P MOSFET rated 30V, 7.4A / -6.7A at 25°C
- Rds(on) specified at 10V (24 mΩ / 29 mΩ max) and 4.5V (40 mΩ / 46 mΩ max) gate drive
- Qg 7.6 nC / 23 nC total gate charge (Qgd 1.1 nC / 3.4 nC)
- Junction temperature up to 150°C
- SOP8B-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 7.4A / -6.7A |
| ID @ 100°C | 4.7A / -4.2A |
| PD | 2W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 24 mΩ / 29 mΩ |
| Rds(on) @ VGS = 4.5V | 40 mΩ / 46 mΩ |
| VGS(th) | ±2V |
| Capacitance | |
| Ciss | 389 pF / 1260 pF |
| Coss | 49 pF / 123 pF |
| Crss | 40 pF / 111 pF |
| Gate charge | |
| Qg | 7.6 nC / 23 nC |
| Qgs | 1.9 nC / 5.1 nC |
| Qgd | 1.1 nC / 3.4 nC |
| Switching | |
| td(on) | 3.6 ns / 12 ns |
| tr | 26 ns / 38 ns |
| td(off) | 9.4 ns / 152 ns |
| tf | 18 ns / 72 ns |
| Body diode | |
| trr | 5.4 ns / 12 ns |
| Qrr | 1.6 nC / 6.8 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM4719?
- iM4719 is a 30V Complementary N+P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOP8B-8L package.
- What are the key ratings of iM4719?
- iM4719 is rated 30V VDS and 7.4A / -6.7A at 25°C, with Rds(on) of 24 mΩ / 29 mΩ max at VGS = 10V and 40 mΩ / 46 mΩ max at 4.5V.
- Is iM4719 in production?
- iM4719 is in mass production. Samples are available from inergy.
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