Power MOSFET
iM4711A Mass production
30V Complementary N+P MOSFET, 35 mΩ / 65 mΩ, SOP8A-8L
Key specifications
- Type
- Complementary N+P MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 6A / -4.5A
- Drain current, ID @ 100°C
- 3.9A / -2.8A
- Rds(on) max @ VGS = 10V
- 35 mΩ / 65 mΩ
- Rds(on) max @ VGS = 4.5V
- 55 mΩ / 120 mΩ
- Gate threshold, VGS(th)
- ±2.2V
- Total gate charge, Qg
- 11.9 nC / 11.2 nC
- Package
- SOP8A-8L
- ESD protection
- No
- Status
- Mass production
Features
- Complementary N+P MOSFET rated 30V, 6A / -4.5A at 25°C
- Rds(on) specified at 10V (35 mΩ / 65 mΩ max) and 4.5V (55 mΩ / 120 mΩ max) gate drive
- Qg 11.9 nC / 11.2 nC total gate charge (Qgd 2 nC / 1.8 nC)
- Junction temperature up to 150°C
- SOP8A-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 6A / -4.5A |
| ID @ 100°C | 3.9A / -2.8A |
| PD | 2W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 35 mΩ / 65 mΩ |
| Rds(on) @ VGS = 4.5V | 55 mΩ / 120 mΩ |
| VGS(th) | ±2.2V |
| Capacitance | |
| Ciss | 600 pF / 629 pF |
| Coss | 62 pF / 79 pF |
| Crss | 48 pF / 70 pF |
| Gate charge | |
| Qg | 11.9 nC / 11.2 nC |
| Qgs | 3 nC / 3.3 nC |
| Qgd | 2 nC / 1.8 nC |
| Switching | |
| td(on) | 4.8 ns / 10 ns |
| tr | 25 ns / 37 ns |
| td(off) | 9 ns / 55 ns |
| tf | 17 ns / 37 ns |
| Body diode | |
| trr | 8 ns / 10.6 ns |
| Qrr | 5 nC / 5.7 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM4711A?
- iM4711A is a 30V Complementary N+P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOP8A-8L package.
- What are the key ratings of iM4711A?
- iM4711A is rated 30V VDS and 6A / -4.5A at 25°C, with Rds(on) of 35 mΩ / 65 mΩ max at VGS = 10V and 55 mΩ / 120 mΩ max at 4.5V.
- Is iM4711A in production?
- iM4711A is in mass production. Samples are available from inergy.
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