Power MOSFET
iM4717 Mass production
60V Complementary N+P MOSFET, 38 mΩ / 107 mΩ, SOP8B-8L
Key specifications
- Type
- Complementary N+P MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 5.9A / -3.5A
- Drain current, ID @ 100°C
- 3.7A / -2.2A
- Rds(on) max @ VGS = 10V
- 38 mΩ / 107 mΩ
- Rds(on) max @ VGS = 4.5V
- 50 mΩ / 136 mΩ
- Gate threshold, VGS(th)
- ±2.5V
- Total gate charge, Qg
- 18.9 nC / 16 nC
- Package
- SOP8B-8L
- ESD protection
- No
- Status
- Mass production
Features
- Complementary N+P MOSFET rated 60V, 5.9A / -3.5A at 25°C
- Rds(on) specified at 10V (38 mΩ / 107 mΩ max) and 4.5V (50 mΩ / 136 mΩ max) gate drive
- Qg 18.9 nC / 16 nC total gate charge (Qgd 2.5 nC / 2.2 nC)
- Junction temperature up to 150°C
- SOP8B-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 5.9A / -3.5A |
| ID @ 100°C | 3.7A / -2.2A |
| PD | 2W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 38 mΩ / 107 mΩ |
| Rds(on) @ VGS = 4.5V | 50 mΩ / 136 mΩ |
| VGS(th) | ±2.5V |
| Capacitance | |
| Ciss | 1042 pF / 889 pF |
| Coss | 48.6 pF / 63 pF |
| Crss | 38 pF / 52 pF |
| Gate charge | |
| Qg | 18.9 nC / 16 nC |
| Qgs | 5.9 nC / 2.3 nC |
| Qgd | 2.5 nC / 2.2 nC |
| Switching | |
| td(on) | 4.6 ns / 9 ns |
| tr | 19 ns / 25 ns |
| td(off) | 14 ns / 107 ns |
| tf | 18 ns / 49 ns |
| Body diode | |
| trr | 11 ns / 15.8 ns |
| Qrr | 7.8 nC / 12.6 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM4717?
- iM4717 is a 60V Complementary N+P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOP8B-8L package.
- What are the key ratings of iM4717?
- iM4717 is rated 60V VDS and 5.9A / -3.5A at 25°C, with Rds(on) of 38 mΩ / 107 mΩ max at VGS = 10V and 50 mΩ / 136 mΩ max at 4.5V.
- Is iM4717 in production?
- iM4717 is in mass production. Samples are available from inergy.
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