Power MOSFET
iM1714 Mass production
60V Complementary N+P MOSFET, 40 mΩ / 66 mΩ, DFN3X3B-EP2-8L
Key specifications
- Type
- Complementary N+P MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 17A / -14A
- Drain current, ID @ 100°C
- 11A / -9A
- Rds(on) max @ VGS = 10V
- 40 mΩ / 66 mΩ
- Rds(on) max @ VGS = 4.5V
- 50 mΩ / 85 mΩ
- Gate threshold, VGS(th)
- ±2V
- Total gate charge, Qg
- 18 nC / 25 nC
- Package
- DFN3X3B-EP2-8L
- ESD protection
- No
- Status
- Mass production
Features
- Complementary N+P MOSFET rated 60V, 17A / -14A at 25°C
- Rds(on) specified at 10V (40 mΩ / 66 mΩ max) and 4.5V (50 mΩ / 85 mΩ max) gate drive
- Qg 18 nC / 25 nC total gate charge (Qgd 2.8 nC / 3.7 nC)
- Junction temperature up to 150°C
- DFN3X3B-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 17A / -14A |
| ID @ 100°C | 11A / -9A |
| PD | 20.8W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 40 mΩ / 66 mΩ |
| Rds(on) @ VGS = 4.5V | 50 mΩ / 85 mΩ |
| VGS(th) | ±2V |
| Capacitance | |
| Ciss | 1071 pF / 1449 pF |
| Coss | 43 pF / 63 pF |
| Crss | 36 pF / 18 pF |
| Gate charge | |
| Qg | 18 nC / 25 nC |
| Qgs | 5.1 nC / 6 nC |
| Qgd | 2.8 nC / 3.7 nC |
| Switching | |
| td(on) | 6.3 ns / 13 ns |
| tr | 13 ns / 51 ns |
| td(off) | 16 ns / 213 ns |
| tf | 4.9 ns / 97 ns |
| Body diode | |
| trr | 10 ns / 12 ns |
| Qrr | 7 nC / 25 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1714?
- iM1714 is a 60V Complementary N+P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3X3B-EP2-8L package.
- What are the key ratings of iM1714?
- iM1714 is rated 60V VDS and 17A / -14A at 25°C, with Rds(on) of 40 mΩ / 66 mΩ max at VGS = 10V and 50 mΩ / 85 mΩ max at 4.5V.
- Is iM1714 in production?
- iM1714 is in mass production. Samples are available from inergy.
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