Power MOSFET
iM1625 Mass production
30V Dual N MOSFET, 12 mΩ, PDFN3.3X3.3A-EP2-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 33A
- Rds(on) max @ VGS = 10V
- 12 mΩ
- Rds(on) max @ VGS = 4.5V
- 20 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 20.6 nC
- Package
- PDFN3.3X3.3A-EP2-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual N MOSFET rated 30V, 33A at 25°C
- Rds(on) specified at 10V (12 mΩ max) and 4.5V (20 mΩ max) gate drive
- Qg 20.6 nC total gate charge (Qgd 3.2 nC)
- Junction temperature up to 150°C
- PDFN3.3X3.3A-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 33A |
| PD | 20W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 12 mΩ |
| Rds(on) @ VGS = 4.5V | 20 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 1106 pF |
| Coss | 113 pF |
| Crss | 97 pF |
| Gate charge | |
| Qg | 20.6 nC |
| Qgs | 4.4 nC |
| Qgd | 3.2 nC |
| Switching | |
| td(on) | 6.2 ns |
| tr | 29 ns |
| td(off) | 16 ns |
| tf | 18 ns |
| Body diode | |
| trr | 8.3 ns |
| Qrr | 3.1 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1625?
- iM1625 is a 30V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN3.3X3.3A-EP2-8L package.
- What are the key ratings of iM1625?
- iM1625 is rated 30V VDS and 33A at 25°C, with Rds(on) of 12 mΩ max at VGS = 10V and 20 mΩ max at 4.5V.
- Is iM1625 in production?
- iM1625 is in mass production. Samples are available from inergy.
Need iM1625 samples or design help?
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