Power MOSFET
iM1623T Mass production
30V Dual N MOSFET, 15 mΩ, PDFN5X6C-EP2-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 10A
- Rds(on) max @ VGS = 10V
- 15 mΩ
- Rds(on) max @ VGS = 4.5V
- 26 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 21 nC
- Package
- PDFN5X6C-EP2-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual N MOSFET rated 30V, 10A at 25°C
- Rds(on) specified at 10V (15 mΩ max) and 4.5V (26 mΩ max) gate drive
- Qg 21 nC total gate charge (Qgd 3 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 10A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 15 mΩ |
| Rds(on) @ VGS = 4.5V | 26 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 1090 pF |
| Coss | 114 pF |
| Crss | 97 pF |
| Gate charge | |
| Qg | 21 nC |
| Qgs | 4.9 nC |
| Qgd | 3 nC |
| Switching | |
| td(on) | 6.8 ns |
| tr | 29 ns |
| td(off) | 16 ns |
| tf | 17 ns |
| Body diode | |
| trr | 8.4 ns |
| Qrr | 2.9 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1623T?
- iM1623T is a 30V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP2-8L package.
- What are the key ratings of iM1623T?
- iM1623T is rated 30V VDS and 10A at 25°C, with Rds(on) of 15 mΩ max at VGS = 10V and 26 mΩ max at 4.5V.
- Is iM1623T in production?
- iM1623T is in mass production. Samples are available from inergy.
Need iM1623T samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.