Power MOSFET
iMN01N12T Mass production
120V N-channel MOSFET, 2.4 mΩ, TOLLB-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 120V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 205A
- Drain current, ID @ 100°C
- 145A
- Rds(on) max @ VGS = 10V
- 2.4 mΩ
- Rds(on) max @ VGS = 6V
- 3.3 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 213 nC
- Package
- TOLLB-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 120V, 205A at 25°C
- Rds(on) specified at 10V (2.4 mΩ max) and 6V (3.3 mΩ max) gate drive
- Qg 213 nC total gate charge (Qgd 54 nC)
- Junction temperature up to 175°C
- TOLLB-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 120V |
| VGS | ±20V |
| ID @ 25°C | 205A |
| ID @ 100°C | 145A |
| PD | 230W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 2.4 mΩ |
| Rds(on) @ VGS = 6V | 3.3 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 11834 pF |
| Coss | 1350 pF |
| Crss | 78 pF |
| Gate charge | |
| Qg | 213 nC |
| Qgs | 62 nC |
| Qgd | 54 nC |
| Switching | |
| td(on) | 30 ns |
| tr | 102 ns |
| td(off) | 143 ns |
| tf | 101 ns |
| Body diode | |
| trr | 137 ns |
| Qrr | 474 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN01N12T?
- iMN01N12T is a 120V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TOLLB-8L package.
- What are the key ratings of iMN01N12T?
- iMN01N12T is rated 120V VDS and 205A at 25°C, with Rds(on) of 2.4 mΩ max at VGS = 10V and 3.3 mΩ max at 6V.
- Is iMN01N12T in production?
- iMN01N12T is in mass production. Samples are available from inergy.
Need iMN01N12T samples or design help?
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