Power MOSFET
iMN011N06T Mass production
60V N-channel MOSFET, 1.12 mΩ, TOLLA-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 200A
- Drain current, ID @ 100°C
- 200A
- Rds(on) max @ VGS = 10V
- 1.12 mΩ
- Rds(on) max @ VGS = 4.5V
- 2 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 150 nC
- Package
- TOLLA-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 60V, 200A at 25°C
- Rds(on) specified at 10V (1.12 mΩ max) and 4.5V (2 mΩ max) gate drive
- Qg 150 nC total gate charge (Qgd 37 nC)
- Junction temperature up to 175°C
- TOLLA-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 200A |
| ID @ 100°C | 200A |
| PD | 200W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.12 mΩ |
| Rds(on) @ VGS = 4.5V | 2 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 7498 pF |
| Coss | 2140 pF |
| Crss | 53 pF |
| Gate charge | |
| Qg | 150 nC |
| Qgs | 33 nC |
| Qgd | 37 nC |
| Switching | |
| td(on) | 20 ns |
| tr | 110 ns |
| td(off) | 122 ns |
| tf | 112 ns |
| Body diode | |
| trr | 71 ns |
| Qrr | 107 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN011N06T?
- iMN011N06T is a 60V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TOLLA-8L package.
- What are the key ratings of iMN011N06T?
- iMN011N06T is rated 60V VDS and 200A at 25°C, with Rds(on) of 1.12 mΩ max at VGS = 10V and 2 mΩ max at 4.5V.
- Is iMN011N06T in production?
- iMN011N06T is in mass production. Samples are available from inergy.
Need iMN011N06T samples or design help?
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