Power MOSFET

iM5303 Mass production

40V Complementary N+P MOSFET, 17 mΩ / 31 mΩ, TO252-4L

Key specifications

Type
Complementary N+P MOSFET
Drain-source voltage, VDS
40V
Gate-source voltage, VGS
±20V
Drain current, ID @ 25°C
24A / -24A
Drain current, ID @ 100°C
23A / -19A
Rds(on) max @ VGS = 10V
17 mΩ / 31 mΩ
Rds(on) max @ VGS = 4.5V
24 mΩ / 46 mΩ
Gate threshold, VGS(th)
±2.0V
Total gate charge, Qg
21 nC / 28 nC
Package
TO252-4L
ESD protection
No
Status
Mass production

Features

  • Complementary N+P MOSFET rated 40V, 24A / -24A at 25°C
  • Rds(on) specified at 10V (17 mΩ / 31 mΩ max) and 4.5V (24 mΩ / 46 mΩ max) gate drive
  • Qg 21 nC / 28 nC total gate charge (Qgd 3.2 nC / 3.8 nC)
  • Junction temperature up to 150°C
  • TO252-4L package

Electrical characteristics

ParameterValue
Ratings
VDS40V
VGS±20V
ID @ 25°C24A / -24A
ID @ 100°C23A / -19A
PD35W
Tj max150°C
On-resistance (max)
Rds(on) @ VGS = 10V17 mΩ / 31 mΩ
Rds(on) @ VGS = 4.5V24 mΩ / 46 mΩ
VGS(th)±2.0V
Capacitance
Ciss1081 pF / 1690 pF
Coss78 pF / 113 pF
Crss68 pF / 86 pF
Gate charge
Qg21 nC / 28 nC
Qgs5 nC / 8.1 nC
Qgd3.2 nC / 3.8 nC
Switching
td(on)7.2 ns / 16 ns
tr45 ns / 75 ns
td(off)18 ns / 220 ns
tf27 ns / 122 ns
Body diode
trr9.9 ns / 14 ns
Qrr4.7 nC / 9.1 nC

Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.

Quick answers

What is iM5303?
iM5303 is a 40V Complementary N+P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252-4L package.
What are the key ratings of iM5303?
iM5303 is rated 40V VDS and 24A / -24A at 25°C, with Rds(on) of 17 mΩ / 31 mΩ max at VGS = 10V and 24 mΩ / 46 mΩ max at 4.5V.
Is iM5303 in production?
iM5303 is in mass production. Samples are available from inergy.

Need iM5303 samples or design help?

Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.

Remote motor fine-tune

inergy Technology Inc. · mkt@inergy.com.tw · www.inergy.com.tw