Power MOSFET
iM5229B Mass production
60V N-channel MOSFET, 6 mΩ, TO252A-3L/TO252B-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 60A
- Drain current, ID @ 100°C
- 47A
- Rds(on) max @ VGS = 10V
- 6 mΩ
- Rds(on) max @ VGS = 4.5V
- 11 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 40 nC
- Package
- TO252A-3L/TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 60V, 60A at 25°C
- Rds(on) specified at 10V (6 mΩ max) and 4.5V (11 mΩ max) gate drive
- Qg 40 nC total gate charge (Qgd 10 nC)
- Junction temperature up to 150°C
- TO252A-3L/TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 60A |
| ID @ 100°C | 47A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 6 mΩ |
| Rds(on) @ VGS = 4.5V | 11 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 2019 pF |
| Coss | 911 pF |
| Crss | 49 pF |
| Gate charge | |
| Qg | 40 nC |
| Qgs | 9 nC |
| Qgd | 10 nC |
| Switching | |
| td(on) | 13 ns |
| tr | 42 ns |
| td(off) | 34 ns |
| tf | 55 ns |
| Body diode | |
| trr | 62 ns |
| Qrr | 65 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5229B?
- iM5229B is a 60V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L/TO252B-3L package.
- What are the key ratings of iM5229B?
- iM5229B is rated 60V VDS and 60A at 25°C, with Rds(on) of 6 mΩ max at VGS = 10V and 11 mΩ max at 4.5V.
- Is iM5229B in production?
- iM5229B is in mass production. Samples are available from inergy.
Need iM5229B samples or design help?
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