Power MOSFET
iM5105 Mass production
60V N-channel MOSFET, 8.5 mΩ, TO251-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 48A
- Drain current, ID @ 100°C
- 33A
- Rds(on) max @ VGS = 10V
- 8.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 13 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 26 nC
- Package
- TO251-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 60V, 48A at 25°C
- Rds(on) specified at 10V (8.5 mΩ max) and 4.5V (13 mΩ max) gate drive
- Qg 26 nC total gate charge (Qgd 6.9 nC)
- Junction temperature up to 150°C
- TO251-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 48A |
| ID @ 100°C | 33A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 8.5 mΩ |
| Rds(on) @ VGS = 4.5V | 13 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 1244 pF |
| Coss | 548 pF |
| Crss | 54 pF |
| Gate charge | |
| Qg | 26 nC |
| Qgs | 5 nC |
| Qgd | 6.9 nC |
| Switching | |
| td(on) | 7 ns |
| tr | 30 ns |
| td(off) | 22 ns |
| tf | 61 ns |
| Body diode | |
| trr | 45 ns |
| Qrr | 33 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5105?
- iM5105 is a 60V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO251-3L package.
- What are the key ratings of iM5105?
- iM5105 is rated 60V VDS and 48A at 25°C, with Rds(on) of 8.5 mΩ max at VGS = 10V and 13 mΩ max at 4.5V.
- Is iM5105 in production?
- iM5105 is in mass production. Samples are available from inergy.
Need iM5105 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.