Power MOSFET
iM4953 Mass production
30V Dual P MOSFET, 50 mΩ, SOP8A-8L/SOP8B-8L
Key specifications
- Type
- Dual P MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -5.1A
- Drain current, ID @ 100°C
- -3.2A
- Rds(on) max @ VGS = 10V
- 50 mΩ
- Rds(on) max @ VGS = 4.5V
- 80 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 12 nC
- Package
- SOP8A-8L/SOP8B-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual P MOSFET rated 30V, -5.1A at 25°C
- Rds(on) specified at 10V (50 mΩ max) and 4.5V (80 mΩ max) gate drive
- Qg 12 nC total gate charge (Qgd 1.6 nC)
- Junction temperature up to 150°C
- SOP8A-8L/SOP8B-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -5.1A |
| ID @ 100°C | -3.2A |
| PD | 2W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 50 mΩ |
| Rds(on) @ VGS = 4.5V | 80 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 665 pF |
| Coss | 70 pF |
| Crss | 60 pF |
| Gate charge | |
| Qg | 12 nC |
| Qgs | 3.1 nC |
| Qgd | 1.6 nC |
| Switching | |
| td(on) | 6.6 ns |
| tr | 25 ns |
| td(off) | 79 ns |
| tf | 45 ns |
| Body diode | |
| trr | 34 ns |
| Qrr | 1.2 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM4953?
- iM4953 is a 30V Dual P power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOP8A-8L/SOP8B-8L package.
- What are the key ratings of iM4953?
- iM4953 is rated 30V VDS and -5.1A at 25°C, with Rds(on) of 50 mΩ max at VGS = 10V and 80 mΩ max at 4.5V.
- Is iM4953 in production?
- iM4953 is in mass production. Samples are available from inergy.
Need iM4953 samples or design help?
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