Power MOSFET
iM2015 Mass production
12V Dual N MOSFET, , PDFN2X5A-EP1-6L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 12V
- Gate-source voltage, VGS
- ±10V
- Drain current, ID @ 25°C
- 19A
- Rds(on) max @ VGS = 4.5V
- 6 mΩ
- Rds(on) max @ VGS = 2.5V
- 8.1 mΩ
- Gate threshold, VGS(th)
- 1V
- Total gate charge, Qg
- 29 nC
- Package
- PDFN2X5A-EP1-6L
- ESD protection
- Yes
- Status
- Mass production
Features
- Dual N MOSFET rated 12V, 19A at 25°C
- Rds(on) specified at 10V ( max) and 4.5V (6 mΩ max) gate drive
- Qg 29 nC total gate charge (Qgd 8 nC)
- Junction temperature up to 150°C
- PDFN2X5A-EP1-6L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 12V |
| VGS | ±10V |
| ID @ 25°C | 19A |
| PD | 3.5W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 4.5V | 6 mΩ |
| Rds(on) @ VGS = 2.5V | 8.1 mΩ |
| VGS(th) | 1V |
| Capacitance | |
| Ciss | 2150 pF |
| Coss | 579 pF |
| Crss | 539 pF |
| Gate charge | |
| Qg | 29 nC |
| Qgs | 2.8 nC |
| Qgd | 8 nC |
| Switching | |
| td(on) | 372 ns |
| tr | 984 ns |
| td(off) | 2167 ns |
| tf | 2948 ns |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2015?
- iM2015 is a 12V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN2X5A-EP1-6L package.
- What are the key ratings of iM2015?
- iM2015 is rated 12V VDS and 19A at 25°C, with Rds(on) of max at VGS = 10V and 6 mΩ max at 4.5V.
- Is iM2015 in production?
- iM2015 is in mass production. Samples are available from inergy.
Need iM2015 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.