Power MOSFET
iM18119 Mass production
150V N-channel MOSFET, 51 mΩ, PDFN5X6A-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 150V
- Gate-source voltage, VGS
- ±12V
- Drain current, ID @ 25°C
- 18A
- Drain current, ID @ 100°C
- 12A
- Rds(on) max @ VGS = 10V
- 51 mΩ
- Rds(on) max @ VGS = 4.5V
- 56 mΩ
- Gate threshold, VGS(th)
- 1V
- Total gate charge, Qg
- 26 nC
- Package
- PDFN5X6A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 150V, 18A at 25°C
- Rds(on) specified at 10V (51 mΩ max) and 4.5V (56 mΩ max) gate drive
- Qg 26 nC total gate charge (Qgd 5 nC)
- Junction temperature up to 150°C
- PDFN5X6A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 150V |
| VGS | ±12V |
| ID @ 25°C | 18A |
| ID @ 100°C | 12A |
| PD | 32W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 51 mΩ |
| Rds(on) @ VGS = 4.5V | 56 mΩ |
| VGS(th) | 1V |
| Capacitance | |
| Ciss | 1364 pF |
| Coss | 78 pF |
| Crss | 11 pF |
| Gate charge | |
| Qg | 26 nC |
| Qgs | 5 nC |
| Qgd | 5 nC |
| Switching | |
| td(on) | 6 ns |
| tr | 6 ns |
| td(off) | 34 ns |
| tf | 27 ns |
| Body diode | |
| trr | 65 ns |
| Qrr | 84 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18119?
- iM18119 is a 150V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6A-EP1-8L package.
- What are the key ratings of iM18119?
- iM18119 is rated 150V VDS and 18A at 25°C, with Rds(on) of 51 mΩ max at VGS = 10V and 56 mΩ max at 4.5V.
- Is iM18119 in production?
- iM18119 is in mass production. Samples are available from inergy.
Need iM18119 samples or design help?
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