Power MOSFET
iM18109 Mass production
60V N-channel MOSFET, 15 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 33A
- Drain current, ID @ 100°C
- 21A
- Rds(on) max @ VGS = 10V
- 15 mΩ
- Rds(on) max @ VGS = 4.5V
- 20 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 18 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 60V, 33A at 25°C
- Rds(on) specified at 10V (15 mΩ max) and 4.5V (20 mΩ max) gate drive
- Qg 18 nC total gate charge (Qgd 3.1 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 33A |
| ID @ 100°C | 21A |
| PD | 32W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 15 mΩ |
| Rds(on) @ VGS = 4.5V | 20 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 853 pF |
| Coss | 286 pF |
| Crss | 40 pF |
| Gate charge | |
| Qg | 18 nC |
| Qgs | 3.9 nC |
| Qgd | 3.1 nC |
| Switching | |
| td(on) | 6.3 ns |
| tr | 31 ns |
| td(off) | 17 ns |
| tf | 18 ns |
| Body diode | |
| trr | 18 ns |
| Qrr | 5.5 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18109?
- iM18109 is a 60V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM18109?
- iM18109 is rated 60V VDS and 33A at 25°C, with Rds(on) of 15 mΩ max at VGS = 10V and 20 mΩ max at 4.5V.
- Is iM18109 in production?
- iM18109 is in mass production. Samples are available from inergy.
Need iM18109 samples or design help?
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