Power MOSFET
iM1621 Mass production
40V Dual N MOSFET, 29 mΩ, PDFN5X6C-EP2-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 40V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 28A
- Rds(on) max @ VGS = 10V
- 29 mΩ
- Rds(on) max @ VGS = 4.5V
- 46 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 11.8 nC
- Package
- PDFN5X6C-EP2-8L
- ESD protection
- Yes
- Status
- Mass production
Features
- Dual N MOSFET rated 40V, 28A at 25°C
- Rds(on) specified at 10V (29 mΩ max) and 4.5V (46 mΩ max) gate drive
- Qg 11.8 nC total gate charge (Qgd 1.8 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 40V |
| VGS | ±20V |
| ID @ 25°C | 28A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 29 mΩ |
| Rds(on) @ VGS = 4.5V | 46 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 624 pF |
| Coss | 49 pF |
| Crss | 40 pF |
| Gate charge | |
| Qg | 11.8 nC |
| Qgs | 3.3 nC |
| Qgd | 1.8 nC |
| Switching | |
| td(on) | 5 ns |
| tr | 25.8 ns |
| td(off) | 10 ns |
| tf | 18 ns |
| Body diode | |
| trr | 6.5 ns |
| Qrr | 3.4 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1621?
- iM1621 is a 40V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP2-8L package.
- What are the key ratings of iM1621?
- iM1621 is rated 40V VDS and 28A at 25°C, with Rds(on) of 29 mΩ max at VGS = 10V and 46 mΩ max at 4.5V.
- Is iM1621 in production?
- iM1621 is in mass production. Samples are available from inergy.
Need iM1621 samples or design help?
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