Power MOSFET
T2N7002ELT1G Mass production
60V N-channel MOSFET, 3000 mΩ, SOT23-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 0.43A
- Rds(on) max @ VGS = 10V
- 3000 mΩ
- Rds(on) max @ VGS = 4.5V
- 4000 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 305 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- N-channel MOSFET rated 60V, 0.43A at 25°C
- Rds(on) specified at 10V (3000 mΩ max) and 4.5V (4000 mΩ max) gate drive
- Qg 305 nC total gate charge (Qgd 205 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 60V |
| VGS | ±20V |
| ID @ 25°C | 0.43A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 3000 mΩ |
| Rds(on) @ VGS = 4.5V | 4000 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 30 pF |
| Coss | 4.2 pF |
| Crss | 3 pF |
| Gate charge | |
| Qg | 305 nC |
| Qgs | 85 nC |
| Qgd | 205 nC |
| Switching | |
| td(on) | 3.9 ns |
| tr | 3.5 ns |
| td(off) | 16 ns |
| tf | 10 ns |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is T2N7002ELT1G?
- T2N7002ELT1G is a 60V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of T2N7002ELT1G?
- T2N7002ELT1G is rated 60V VDS and 0.43A at 25°C, with Rds(on) of 3000 mΩ max at VGS = 10V and 4000 mΩ max at 4.5V.
- Is T2N7002ELT1G in production?
- T2N7002ELT1G is in mass production. Samples are available from inergy.
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